, La 1ère Ecole d’Automne sur les Matériaux Emergents(EAME)

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Galvanostatic electrodeposition and characterization of ZnO nanosheets for optoelectronic application
Meriem Aloui

Dernière modification: 2017-11-21

Résumé


At present, the development of Transparent Conductive Oxide (TCO) is at the heart of the concerns of a large scientific community, for possible applications in the field of optoelectronics and photovoltaics. Among these TCOs, metal oxides based on zinc (ZnO) constitute an important class of semiconductor with its remarkable properties; we can mention quantum electron transport, tunable bandwidth, mechanical flexibility, high thermal and chemical stability, extremely high optical transparency[1], [2]. ZnO nanosheet is one type of metal oxide nanomaterials with its unique structures utilized in many devices, such as dye sensitized solar cell [3], gas sensor [4], and photodetectors [5]. Deposition of ZnO nanosheet on conductive substrate by electrochemical method offers a simple way to get excellent material-to-substrate attachment which ensure good electron transport needed for electronic devices. Generally the electrochemical deposition have been conducted in the potentiostatic mode but not galvanostatic, considered that the potential decides the deposition reaction. However, for such an insulating nanostructure, it is difficult to directly relate the reaction to the electrode potential. On the other hand, the galvanostatic electrodeposition, that is convenient by using two electrodes system, can give better control over the constant crystal growth rate due to the external current responsible for the growth being always supplied in the constant manner throughout deposition, regardless the changes of the structure. In this work, layers of ZnO were successfully produced by electrochemical deposition using the galvanostatic regime on FTO substrates. The resulting layers of ZnO have been characterized by different techniques. From the Mott-Schottky measurements, it has been shown that ZnO has an n-type semiconductor behavior and high conductivity confirmed by photo-current and impedance measurement respectively. By X-ray diffraction (XRD), it has been shown that the ZnO nanostructures are deposited in the form of a wurtzite structure with a preferential orientation according to plane (002). UV-Vis spectrophotometry present a high transmittance in the visible range. The morphological characterization was well observed and studied by the SEM. The results obtained give an optimistic prediction for ZnO nanosheet as conductive layer in heterojunction with desired optical and electrical properties which leads to a good yield for a possible photovoltaic application.