Last modified: 2018-07-19
Abstract
In this work, we studied the formation and the thermal stability of a ternary silicide (NixCo1-x) Si2, obtained by thermal annealing. Ni and Co thin films were deposited on Si (111) substrate. The performed annealing of 500 Ni/100Co/Si (111) samples is carried out by means of a conventional furnace during 20 minutes and a temperature range 300, 600 and 800C. The obtained specimens were investigated using grazing incidence X-Ray diffraction (GIXRD), X-ray fluorescence spectrometer, electric resistance square measurement and vibrating sample magnetometer. XRD spectrum showed that the formation temperature of the ternary (Nix Co1-x) Si2 phase was relatively lower compared with those of the NiSi2 and CoSi2 disilicides and it maintained its sheet resistance below 2.23 Ω/sq, X-ray fluorescence spectrometer analysis shows a composition about 85 atm% for Ni and 15atm% of Co. Furthermore, hysteresis loop displays a ferromagnetic behavior of ours deposited films.