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The effect of Sb2O3 content on the microstructure and electrical properties of (Mn2O3, V2O3)/ZnO varistor materials
Last modified: 2018-08-02
Abstract
The microstructure and electrical properties of ZnO -(Mn2O3, V2O3) -based varistor ceramics doped with Sb2O3 content sintered at 1000C were investigated. The study deals with the 0 and 0.1 mol% Sb2O3 doped ZnO. (Mn2O3, V2O3)/ZnO Based varistor containing 0.5 mol% of V2O3, 0.5mol% of Mn2O3 and 99mol% of ZnO has been manufactured by conventional ceramic procedure. Different, characterization technique such as X-ray diffraction (XRD), scanning electron microscopy (SEM)equipped with energy dispersive X-ray (EDX)have been used. Microstructure and electrical characteristic have been analyzed as a function of the Sb2O3 content and sintering temperature.Various oxides and, solide solutions such as Hexagonal Zn3(VO4)2 and Sb2ZnO4 have been formed. The results from the experiments showed that the microstructure and electrical properties of the samples varied with the increase content of Sb2O3. Optimal values for the electrical characteristics of the varistor ceramics were obtained when we increase content of Sb2O3. Grain size, the dielectric constant and relative density, decrease when Sb2O3 content increases whereas, non-linearity coefficient, the dielectric loss and breakdown voltage increased with increase content of Sb2O3.