SiO₂/Si samples with thickness of 300 nm are implanted with Kr at 220 keV and with a dose of 5x10¹⁶at/cm². The maximum concentration of Kr at ΔRp is taken to be 6x10²¹ Kr/cm³ much less than the limit of solubility of Kr (6.03x10²² Kr/cm³). MET outcomes reveal the formation of nano-bubbles having diameters of about 13nm along with a homogeneous distribution over a range of 220 nm. Such homogeneity is confirmed by RBS spectroscopy. IR spectroscopy shows that the implantation leads to breaking the so-called bridging bonds in Q₃-type tetrahedrons and Q₄ species. Furthermore, it is possible to quantify various effects of Kr implantation in silica and show that the most probable process during the implantation is governed by the reaction '. The presence of E' contributes strongly to the formation of nano-bubbles leading to the reduction of the silica permittivity from 4 down to 2.8.