Copper thin films were elaborated by the electrodeposition on silicon substrates unknown type, then impossible deposition on black silicon; to their high resistivity. The prepared films were carried out under the chronoampérmétrie and chronopotentiometry. Voltammetry was used initially in order to study the electrodeposition and growth model mechanism. Deposits were characterized by three techniques: the profilometer, the X-ray diffraction (XRD), the Hall Effect. The films have the Cu phase in the cubic system with a preferential growth orientation in the direction (111), (200), (220) and (311) located in diffractometer angles 42.9 °, 50.0 °, 73.8 °, and 89.6 °, respectively. The electrical analysis indicates reports of low resistivity copper to 10^-9 ï— cm. The results obtained were compared with other previous work.