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In this work, we have presented a compact model of the I-V and optoelectronic characteristics of optical gated CNTFET,Our study is based on a physical modeling and a numerical simulation of the electrical and optical properties of the carbon nanotubes in OG-CNTFET component. We firstly presented a mathematical modeling of current voltage characteristics as well as the optical characteristics of an OG-CNTEFT transistors, in this optic , I-V results were presented  , the effect of the laser wavelength on the drain current of the component were investigated. The results obtained showed that our component had a high response when the laser wavelength took the value of 445nm .This study open several perspectives either on the scientific or technological side and it will encourage us to continue to work in this important and recent scientific field.