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Group−III nitrides, as InN are very important materials for optoelectronics and electronics. It is essential for the realization of such devices to grow high quality nitride. In this paper, we study electrically thin InN films realized by the nitridation of InP (100) substrates using a glow discharge source (GDS) in ultra-high vacuum. The current–voltage characteristic of Au/InN/n-InP Schottky diode is analyzed by using different methods at room temperature. The barrier height and ideality factor of the diode are determined by using the conventional current–voltage method as 0.69 eV and 3.80, respectively. The series resistance (Rs) is evaluated to 4.58 Ω from Cheung functions.