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In this study, a Titanium Nitride TiN was deposited by active radio-frequency (RF) magnetron sputtering on a monocrystalline substrate "magnesium oxide MgO"[1,2], the layers is deposited with the creation of plasma, the amount of nitrogen introduced in the chamber of deposition which presents an essential factor to have a stoichiometric layer, for this purpose, three levels of nitrogen were used N% = 30%, 50%, 100%, the X-ray diffractions of TiN deposited at 50%, show the presence of two peaks (200) and (400), also four peaks separated by 90 ° in Phiscan, this peaks show an epitaxial growth of the TiN layer deposited on MgO, the stoichiometry of TiN is shown by EDX analyzes with a 0.94 Ti / N ratio, the increase in the amount of N2 up to 100% clearly results a decrease of cristallization  of TiN, however, the deposition at an atmosphere of 30% N2% shows an additional peak at about 44°, which corresponds to Ti2N, and a Ti / N ration of 1.12. Morphologically, a high surface density with similar morphologies observed by using a 30% and 50% of N2, however, a less homogeneous surface that contains relatively large bumps is observed with a pure atmosphere of N2. According to the variation of the nitrogen levels, a deposit of TiN on MgO in an atmosphere of 50% of N2 has an epitaxial and stoichiometric layer.