The study of electron transport in submicron devices, constitute a good approach to determine the device ability to operate under hard conditions like temperature, electric field and frequency. In this paper, the electron transport characteristics of the Ga0.5In0.5Sb based MESFET are presented. The channel length is fixed to 65 nm. The characteristics are obtained using Monte Carlo Device Simulation based on the parallel resolution of the coupled Poisson-Boltzmann equations. The resolution of these equations allows calculating the electric field, energy, electron velocity and electrostatic potential distribution across the geometry of the device.

Keywords

Monte Carlo Device Simulation, III-V semiconductors, GaInSb material, Electronic Transport, MESFET Transistor

References

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