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Cd doped TiO₂ thin films were deposited onto n-type Si (100) substrates by the sol-gel dip-coating method. The samples treated at temperatures ranging from 600 to1000^oC for 2h. The effect of annealing temperature on the structural, morphological and electrical properties was studied by X ray diffraction (XRD), Atomic force microscopy (AFM) and Current-Voltage (I-V) characteristics. XRD analyzes shows that the crystalline phase of Cd:TiO₂ thin films comprised only the anatase phases and the crystallinity was enhanced by increasing the annealing temperature. From AFM micrographs, the films are dense and continuous, the surface is well covered with a relatively large grains and pinholes free. The Al/Cd:TiO₂/n-Si diode was formed by using Cd:TiO₂ film deposited at 1000⁰C, the different electrical parameters of such as ideality factor (n), series resistance (R_s) and saturation current (I_s) were calculated from (I-V) characteristics at room temperature. The obtained results show that the prepared Cd:TiO₂ films can be used for semiconductor device applications