CuIn_0.7Ga_0.3Se₂ (CIGS) thin films are deposited on glass (SLG) substrate, by close-spaced vapor transport technique (CSVT) [1]. Pure copper (Cu) contacts are deposited on the front side of SLG/CIGS thin films by physical vapor deposition (PVD) . Hall Effect measurements [2], on these  samples,  named CIGS1 and CIGS2 and grown at substrate temperature (T_s) of  470 °C and 510 °C, respectively,  are  performed in the temperature range (300 K – 438 K), in order to investigate the temperature effect on the electrical parameters such as carrier concentration (p), conductivity (σ)  and mobility (µ). The bandgap energy (E_g) of about 1.38eV and 1.24 eV are extracted from Arrhenius diagram of (p) and (σ), respectively. Activation energies (E_a) at 563.9 meV and 239.4 meV for CIGS1 thin film and 584.2 meV and 72.7 meV for CIGS2 thin film are also determined. Moreover, average mobilities of 1.83 cm²/Vs and 1.77 cm²/Vs are deduced for CIGS1 and CIGS2 thin films, respectively.